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| Mfg Part Number: 646107 9022 | Alternate P/N: 6461079022 | NSN : 5962-01-281-7455 |
| NIIN : 012817455 | CAGE Code : 37695 | Manufacturer: Raytheon Company |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Aviation Gamut, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts 646107 9022 and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Microcircuit Memory 646107 9022 from manufacturer Raytheon Company and many more, all of which are available with short lead times and competitive prices. For NSN parts, Aviation Gamut is the ultimate source.
Our website offers a number of parametric search capabilities, one of which allows you to search specifically for 646107 9022. This means you can quickly sort through National Stock Numbers such as 5962012817455 and find parts from quality manufacturers like Raytheon Company and many others. To begin the purchasing process immediately, submit an RFQ today. Our team of dedicated account managers is standing by and will respond to all inquiries in 15 minutes or less.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.220 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+100.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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