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| Mfg Part Number: 722906-52 | Alternate P/N: 72290652 | NSN : 5962-01-111-0443 |
| NIIN : 011110443 | CAGE Code : 05869 | Manufacturer: Raytheon Company |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Aviation Gamut, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts 722906-52 and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Microcircuit Memory 722906-52 from manufacturer Raytheon Company and many more, all of which are available with short lead times and competitive prices. For NSN parts, Aviation Gamut is the ultimate source.
Our website offers a number of parametric search capabilities, one of which allows you to search specifically for 722906-52. This means you can quickly sort through National Stock Numbers such as 5962011110443 and find parts from quality manufacturers like Raytheon Company and many others. To begin the purchasing process immediately, submit an RFQ today. Our team of dedicated account managers is standing by and will respond to all inquiries in 15 minutes or less.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 302 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 145 INCHES MINIMUM AND 0 175 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND WENABLE AND PROGRAMMABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY512 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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