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| Mfg Part Number: HM6264LP 12 | Alternate P/N: HM6264LP12 | NSN : 5962-01-259-2035 |
| NIIN : 012592035 | CAGE Code : 52531 | Manufacturer: Hitachi Magnetics Corp |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Aviation Gamut, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts HM6264LP 12 and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Microcircuit Memory HM6264LP 12 from manufacturer Hitachi Magnetics Corp and many more, all of which are available with short lead times and competitive prices. For NSN parts, Aviation Gamut is the ultimate source.
Our website offers a number of parametric search capabilities, one of which allows you to search specifically for HM6264LP 12. This means you can quickly sort through National Stock Numbers such as 5962012592035 and find parts from quality manufacturers like Hitachi Magnetics Corp and many others. To begin the purchasing process immediately, submit an RFQ today. Our team of dedicated account managers is standing by and will respond to all inquiries in 15 minutes or less.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.400 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.594 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.280 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 4.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | LOW POWER AND HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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