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ST-67411REV.A with NSN 5962-01-151-1328 by Bae Systems Information And Electronic Systems Integration Inc - Quote Now!

Mfg Part Number: ST-67411REV.A	Alternate P/N: ST67411REVA	NSN : 5962-01-151-1328
NIIN : 011511328	CAGE Code : 19397	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Aviation Gamut, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts ST-67411REV.A and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Microcircuit Memory ST-67411REV.A from manufacturer Bae Systems Information And Electronic Systems Integration Inc and many more, all of which are available with short lead times and competitive prices. For NSN parts, Aviation Gamut is the ultimate source.

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NSN Information for Part Number ST-67411REV.A with NSN 5962-01-151-1328, 5962011511328

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-151-1328 Item Description: Microcircuit Memory	5962	011511328	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
St-67411rev.A	2	2	3

Characteristics Data of NSN 5962-01-151-1328, 5962011511328

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 600 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 205 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-40 0 TO 85 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONANUGC-129V TELETYPEWRITER SET
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN13 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT19397-ST67411A DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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